Study of Hydrogenated Amorphous Silicon Carbon(A-SIC:H) Alloy Thin Film Deposited by Hot Wire Chemical Vapor Deposition (HWCD)

Hot wire chemical vapor deposition (HWCVD) is being looked at as a potential technique for the synthesis of amorphous silicon as well as micro- and nano-crystalline silicon and its alloy thin films. These include thin films of silicon-carbon (a-SiC:H) which are a class of wide band gap material and silicon nitrogen (a-SiN:H) which can replace the conventional silicon di-oxide (SiO2) insulator. The primary goal of this Ph.D. project is to understand in detail the process-structure-property correlation in the Hot Wire CVD a-SiC:H alloy thin films. The range of properties that have been determined cover a wide span from optical to biocompatibility - the motivation being to obtain device quality high band gap a-SiC:H thin films for the application in solar cells, TFLEDs, diffusion barrier layer and bio-implant coating applications. The optical properties are determined by UV-Vis spectrophotometry and photoluminescence studies. More Info

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