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Design of a Family of Novel CNTFET-based flash memory

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Project Owner : pradeepkumarp
Created Date : Tue, 26/04/2011 - 15:43
Project Description :

   The carbon nanotube field effect transistor (CNTFET)

is a promising novel device which has attracted much
attention in recent years. Benchmarking figures against
state-of-the-art planar and nonplanar Si logic transistors
have shown that the high mobility, achievable current
density, theoretical transition frequency and Ion/Ioff ratio
show opportunities for future logic transistor applications.
The double-gate CNTFET (shown in Figure 1) is a
specific device designed to improve channel mobility and
control of the off-state in CNTFETs. It is built by placing a
metal front gate terminal (Al) under the nanotube between
the source and the drain. The voltage of the silicon back
gate Vgs-bg influences the behavior of the device in the
following way:
• when Vgs-bg is sufficiently negative (some
hundreds of mV), the device functions like a ptype
FET with a negative threshold voltage and Ioff
(<100 fA) is almost independent of Vds;
• when Vgs-bg is sufficiently positive (some hundreds
of mV), the device functions like an n-type FET
with a positive threshold voltage and Ioff (<100 fA)
is almost independent of Vds;
• when Vgs-bg is floating, the sub-bands with the
contacts are not affected by the bias of the front
gate, and the device is in the off state with a very
weak current (Ioff<100fA).
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